Designing a Multi-purpose GSM Based Interactive Embedded Data-Acquisition System Providing Solutions for Fire Accidents

The Data-Acquisition systems with remote accessibility are greatly demanded in industry and consumer applications. In this paper, a data-acquisition system which can save lives and property, based on GSM communication, accommodating a wide range of electronic devices is presented. The system has the special ability to automatically quench fire by spraying water during fire accidents, simultaneously informing the local fire station and the responsible persons as well, saving loss of life and property. Also the varying status can be instantaneously recorded and uploaded in internet, for failure analysis. By using a GPS receiver it is possible to acquire and display the images of the locations where there are fire accidents by decoding the text SMS data, which helps in continuously tracking the fire accident location using google maps, helping the fire engine to reach instantly. Also the cost-effectiveness of the overall system is proved. The embedded board acts as the main controller of this system which has a SIM card placed in it and thus communicates using GSM, making it accessible from anywhere in the world, providing a faster two-way data transfer between the Embedded system and the client, in real-time

Unveiling the dual role of chemically synthesized copper doped zinc oxide for resistive switching applications

In this study, efforts were devoted to unveiling the dual role of single crystalline Cu (5%) doped ZnO (Cu:ZnO) synthesized by a simple and low-cost chemical process and to investigate its efficacy on resistive switching (RS) applications. It was found that when Cu:ZnO was annealed at a lower temperature of 450 °C and integrated onto ITO/glass for RS applications, only oxygen mediated vacancies were responsible for its resistive switching. However, ferroelectric properties have been observed when the same Cu:ZnO was annealed at a higher temperature of 800 °C and integrated onto Nb doped SrTiO3. X-ray diffraction, high resolution transmission electron microscope, x-ray photoelectron spectroscopy, UV-VIS-near infrared spectrometer, and piezoelectric force microscopy (PFM) were employed to study the crystallinity, interfaces, chemical compositions, bandgap, and domains in Cu:ZnO thin films, respectively. The bandgap of Cu:ZnO was found to be 3.20 eV. PFM study exhibits the domain inversion with 180° polarization inversion by applying an external bias, evidencing its effectiveness for memory applications. When the electrical characteristics were concerned, the RS device based on this ferroelectric Cu:ZnO offers better performance, such as lower SET/RESET voltages (∼1.40 V), higher retention (up to 106 s) without distortion, and higher ON/OFF ratio (2.20 × 103), as compared to the former lower temperature annealed Cu:ZnO devices. A band-diagram was proposed, and transport studies were developed to understand the operational mechanism of these devices. This study explains both the limits and scopes of Cu:ZnO RS devices and formulates an idea which may accelerate the design of future generation devices.Published versio

Efficient Resistive Switching and Spike Rate Dependent Plasticity in a New CuCrO2 Memristor for Plausible Neuromorphic Systems

In this work, we introduce a new class of p-type transparent conductive oxide (TCO) CuCrO2 (150 nm) heterogeneously integrated onto FTO/glass for forming free memristor based neuromorphic applications. The fabricated Al/CuCrO2/FTO memristors demonstrate a reliable bipolar resistive switching with an ON/OFF ratio of 1000. The retention of the device was found to be steady even beyond 106 s, which demonstrates its non-volatility. The current-voltage (I-V) characteristics were fitted to evaluate its transport properties and a band-diagram was projected to have a better insight of the device operational principles. To validate the experimental observations, a new model has been developed, and the simulated I-V behavior was analogues to the experimental one. Efforts were then devoted to observe long-term potentiation (LTP) and longterm depression (LTD) utilizing identical but opposite pulses to evaluate the device?s efficacy for synaptic applications. The synaptic behavior was well controlled by the pulse (pulse amplitude and width) variations. The conductance change was found to be symmetric and then saturated, which reflects the popular biological Hebbian rules. Finally, a long-term synaptic modulation has been implemented by establishing the spike rate dependent plasticity (SRDP) rule, which is a part of spiking neural networks and advantageous to mimic the brain?s capability at low power. All the obtained experimental results were systematically corroborated by neural network simulation. Overall, our approach provides a new road map towards the development of TCO based alternative memristors, which can be employed to mimic the synaptic plasticity for energy-efficient bioinspired neuromorphic systems and non-Von Neumann computer architectures